ONSEMI ISL9R860P2
Manufacturer No:
ISL9R860P2
Manufacturer:
Package:
TO-220-2
Description:
8A, 600V, STEALTH™ Diode
Quantity:
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ISL9R860P2 Information
ONSEMI ISL9R860P2 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI ISL9R860P2.
- Type
- Parameter
- Type
- Single
- VFM Max (V)
- 2.4
- IFSM Max (A)
- 100
- Package Type
- TO-220-2
- Case Outline
- 340BA
- MSL Temp (°C)
- 0
- Container Qty.
- 800
- VRRM Max (V)
- 600
- IR Max (mA)
- 0.1
- MSL Type
- NA
- Type
- Parameter
- Container Type
- TUBE
- IO(rec) Max (A)
- 8
- trr Max (ns)
- 30
Download datasheets and manufacturer documentation for ONSEMI ISL9R860P2.
Datasheet:
Package Drawing:
The ISL9R860P2 is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.
Application
- AC-DC Merchant Power Supply - Servers & Workstations
Feature
- Stealth recovery Trr = 28ns (@IF= 8A)
- Max Forward Voltage, VF = 2.4V (@ TC = 25°C)
- 600V Reverse Voltage and High Reliability
- Avalanche Energy Rated
- RoHS compliant
ISL9R860P2 Relevant information
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