Renesas ISL74422BRHY/SAMPLE
Manufacturer No:
ISL74422BRHY/SAMPLE
Manufacturer:
Renesas
Package:
Description:
9A, Non-Inverting Power MOSFET Drivers
Quantity:
In Stock :2906
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
ISL74422BRHY/SAMPLE Information
Renesas ISL74422BRHY/SAMPLE technical specifications, attributes, parameters and parts with similar specifications to Renesas ISL74422BRHY/SAMPLE.
- Type
- Parameter
- Pkg. Type
- DIE
- Qualification Level
- EM
- Pb (Lead) Free
- No
- MOQ
- 5
- Temp. Range
- -55 to +125°C
- CAGE code
- 34371
- Channels (#)
- 1
- Driver Type
- Low Side
- Drivers (#)
- 1
- FET Type
- MOSFET
- Type
- Parameter
- Fall Time
- 135
- Flow
- RH Hermetic
- Input VCC (Max) (V)
- 18
- Input VCC (Min) (V)
- 8
- Low Side Fall Time (max) (ns)
- 135
- Low Side Rise Time (max) (ns)
- 135
- Output Type
- Non-inverting
- Peak Output Current IPK (A)
- 9
- Peak Output Sink Current (A)
- 9
- Peak Output Source Current (A)
- 9
Download datasheets and manufacturer documentation for Renesas ISL74422BRHY/SAMPLE.
The radiation hardened ISL74422BRH is a non-inverting, monolithic high-speed MOSFET driver designed to convert a 5V CMOS logic input signal into a high current output at voltages up to 18V. Its fast rise/fall times and high current output allow very quick control of even the largest power MOSFETs in high-frequency applications. The input of the ISL74422BRH can be directly driven by our IS-1825ASRH and IS-1845ASRH PWM devices. The 9A high current output minimizes power losses in MOSFETs by rapidly charging and discharging large gate capacitances. A supply UVLO (Under Voltage Lock Out) circuit ensures predictable turn-on and turn-off of the driver. Constructed with the Intersil dielectrically isolated Rad-Hard Silicon Gate (RSG) BiCMOS process, these devices are immune to single event latch-up and have been specifically designed to provide highly reliable performance in harsh radiation environments. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-03248.
- QML qualified per MIL-PRF-38535 requirements
- Electrically screened to DSCC SMD # 5962-03248
- Radiation environment
- Total dose (Max) 300krad(SI)
- Latch-up immune
- IPEAK 9A (Min)
- TFALL (CL = 10nF) 135ns (Max)
- TRISE (CL = 10nF) 135ns (Max)
- Prop delay high-low (CL = 10nF) 175ns (Max)
- Prop delay low-high (CL = 10nF) 175ns (Max)
- Rising UVLO threshold 7.5V (Max)
- Falling UVLO threshold 6.0V (Min)
- UVLO hysteresis 0.3V (Min)
- Wide supply voltage range 8V to 18V
- Low standby current consumption
- Input low 2.1mA (Max)
- Input high 2.7mA (Max)
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