Renesas ISL74422ARHVX
Manufacturer No:
ISL74422ARHVX
Manufacturer:
Renesas
Package:
Description:
Radiation Hardened 9A, Non-Inverting Power MOSFET Drivers
Quantity:
In Stock :1027
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
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Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
ISL74422ARHVX Information
Renesas ISL74422ARHVX technical specifications, attributes, parameters and parts with similar specifications to Renesas ISL74422ARHVX.
- Type
- Parameter
- Pkg. Type
- DIE
- Qualification Level
- Class V
- DLA SMD
- 5962F0152101V9A
- Pb (Lead) Free
- No
- MOQ
- 100
- Temp. Range
- -55 to +125°C
- CAGE code
- 34371
- Channels (#)
- 1
- DSEE (MeV·cm2/mg)
- DSEE Free (DI)
- Driver Type
- Low Side
- Type
- Parameter
- Drivers (#)
- 1
- FET Type
- MOSFET
- Fall Time
- 90
- Flow
- RH Hermetic
- Input VCC (Max) (V)
- 18
- Input VCC (Min) (V)
- 7
- Lead Compliant
- No
- Low Side Fall Time (max) (ns)
- 90
- Low Side Rise Time (max) (ns)
- 105
- Output Type
- Non-inverting
Download datasheets and manufacturer documentation for Renesas ISL74422ARHVX.
The Radiation Hardened ISL74422ARH is a non-inverting, monolithic high-speed MOSFET driver designed to convert a CMOS level input signal into a high current output at voltages up to 18V. Its fast rise times and high current output allow very quick control of even the largest power MOSFETs in high frequency applications. The input of the ISL74422ARH can be directly driven by our HS-1825ARH and IS-1845ASRH PWM devices. The 9A high current output minimizes power losses in MOSFETs by rapidly charging and discharging high gate capacitances. Constructed with the Intersil dielectrically isolated Rad Hard Silicon Gate (RSG) BiCMOS process, these devices are immune to Single Event Latch-up and have been specifically designed to provide highly reliable performance in harsh radiation environments. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-01521.
- QML qualified per MIL-PRF-38535 requirements
- Electrically screened to DSCC SMD # 5962-01521
- Radiation environment
- Total dose (Max): 300krad(SI)
- Latch-up immune
- IPEAK: 9A(Min)
- TF (CL = 10,000pF): 70ns(Typ); 90ns(Max)
- TR (CL = 10,000pF): 90ns(Typ); 105ns(Max)
- Prop delay high-low (CL = 10,000pF): 75ns(Max), 55ns(Typ)
- Prop delay low-high (CL = 10,000pF): 50ns(Max), 30ns(Typ)
- Consistent delay times with VCC changes
- Wide supply voltage range: 7V to 18V
- Low standby power consumption
- Input low: <2mW(Max)
- Inputs high: <18mW(Max)
- ESD protected: >1750V
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
