Renesas ISL73096EHVF
Manufacturer No:
ISL73096EHVF
Manufacturer:
Renesas
Package:
Description:
Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
Quantity:
In Stock :5435
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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ISL73096EHVF Information
Renesas ISL73096EHVF technical specifications, attributes, parameters and parts with similar specifications to Renesas ISL73096EHVF.
- Type
- Parameter
- Lead Count (#)
- 16
- Carrier Type
- Tray
- Moisture Sensitivity Level (MSL)
- Not Applicable
- TID HDR (krad(Si))
- 100
- TID LDR (krad(Si))
- 50
- DLA SMD
- 5962F0721804VXC
- Pb (Lead) Free
- Exempt
- Pb Free Category
- Gold Plate over compliant Undercoat-e4
- MOQ
- 25
- Temp. Range
- -55 to +125°C
- Type
- Parameter
- CAGE code
- 34371
- Flow
- RH Hermetic
- Length (mm)
- 10.4
- NPN Gain Bandwidth Product (GHz)
- 8
- NPN Transistors (#)
- 3
- Noise figure (50Ω) at 1GHz (dB)
- 3.5
- PNP Gain Bandwidth Product (GHz)
- 5.5
- PNP Transistors (#)
- 2
- Pitch (mm)
- 1.3
- Pkg. Dimensions (mm)
- 10.4 x 6.9 x 0.00
Download datasheets and manufacturer documentation for Renesas ISL73096EHVF.
The ISL73096, ISL73127 and ISL73128 are radiation hardened bipolar transistor arrays. The ISL73096 consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127 consists of five NPN transistors on a common substrate. The ISL73128 consists of five PNP transistors on a common substrate. The ISL73096EH, ISL73127EH and ISL73128EH devices encompass all of the production testing of the ISL73096RH, ISL73127RH and ISL73128RH devices and additionally are tested in the Intersil Enhanced Low Dose Rate Sensitivity (ELDERS) product manufacturing flow. One of our bonded wafer, dielectrically isolated fabrication processes provides an immunity to single event latch-up and the capability of highly reliable performance in a radiation environment. The high gain-bandwidth product and low noise figure of these transistors make them ideal for use in high frequency amplifier and mixer applications. Monolithic construction of the NPN and PNP transistors provides the closest electrical and thermal matching possible. Access is provided to each terminal of the transistors for maximum application flexibility.
- Electrically screened to SMD # 5962-07218
- QML qualified per MIL-PRF-38535 requirements
- Radiation tolerance
- High dose rate (50-300rad(Si)/s): 100krad(Si)
- Low dose rate (0.01rad(Si)/s): 50krad(Si)*
- SEL immune: Bonded wafer dielectric isolation
- NPN gain bandwidth product (FT: 8GHz (typ)
- NPN current gain (hFE): 130 (typ)
- NPN early voltage (VA): 50V (typ)
- PNP gain bandwidth product (FT): 5.5GHz (typ)
- PNP current gain (hFE): 60 (typ)
- PNP early voltage (VA): 20V (typ)
- Noise figure (50Ω) at 1GHz: 3.5dB (typ)
- Collector-to-collector leakage: <1pA (typ)
- Complete isolation between transistors * Limit established by characterization
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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