Renesas ISL73041SEHX/SAMPLE
Manufacturer No:
ISL73041SEHX/SAMPLE
Manufacturer:
Renesas
Package:
Description:
Radiation Hardened 12V Half-Bridge GaN FET Driver
Quantity:
In Stock :2626
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
ISL73041SEHX/SAMPLE Information
Renesas ISL73041SEHX/SAMPLE technical specifications, attributes, parameters and parts with similar specifications to Renesas ISL73041SEHX/SAMPLE.
- Type
- Parameter
- Pkg. Type
- DIE
- Qualification Level
- EM
- Pb (Lead) Free
- No
- MOQ
- 10
- Temp. Range
- -55 to +125°C
- CAGE code
- 34371
- Bus Voltage (Max) (V)
- 12
- DSEE (MeV·cm2/mg)
- 86
- Driver Type
- Half Bridge
- Drivers (#)
- 2
- Type
- Parameter
- FET Type
- GaNFET
- Fall Time
- 26
- Flow
- RH Hermetic
- Gate Drive (V)
- 4.5 - 5.5
- High Side Fall Time (max) (ns)
- 26
- High Side Rise Time (max) (ns)
- 29
- Input VCC (Max) (V)
- 13.2
- Input VCC (Min) (V)
- 4.75
- Input Voltage (Max) (V)
- 13.2
- Input Voltage (Min) (V)
- 4.75
Download datasheets and manufacturer documentation for Renesas ISL73041SEHX/SAMPLE.
The ISL73041SEH is a PWM input 12V half-bridge GaN FET driver designed to drive low rDS(ON), high QGS enhance mode Gallium Nitride (eGaN) FETs up to 1.5MHz operation for DC/DC switching regulators. An integrated programmable GaN FET gate drive voltage, high-side bootstrap switch, and high gate drive current provide a compact and robust GaN FET half-bridge driver.
- Up to 20V bootstrap voltage half-bridge driver
- Programmable 4.5V to 5.5V gate drive voltage
- Single tri-level PWM input control
- Separate source and sink driver outputs for independent gate turn-on and turn-off control
- High-side peak driver current: 5A
- Low-side peak driver current: 10A
- Separate high-side and low-side programmable dead time control
- Fast propagation delay with low mismatch
- Full military temperature operation -55 °C to 125 °C ambient range
- 16 Ld hermetic CLCC package
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
