Renesas ISL73033SLHMKZ
Manufacturer No:
ISL73033SLHMKZ
Manufacturer:
Renesas
Package:
Description:
Radiation Hardened 100V GaN FET with Integrated Low-Side GaN FET Driver
Quantity:
In Stock :7058
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
ISL73033SLHMKZ Information
Renesas ISL73033SLHMKZ technical specifications, attributes, parameters and parts with similar specifications to Renesas ISL73033SLHMKZ.
- Type
- Parameter
- Lead Count (#)
- 81
- Carrier Type
- Tray
- Moisture Sensitivity Level (MSL)
- 3
- Pb (Lead) Free
- Yes
- Pb Free Category
- Pb-Free Ball Terminal (SAC-Q)-e6
- MOQ
- 25
- CAGE code
- 34371
- DSEE (MeV·cm2/mg)
- 86
- Flow
- RH Plastic
- Gate Drive (V)
- 4.5
- Type
- Parameter
- Input Voltage (Max) (V)
- 13.2
- Input Voltage (Min) (V)
- 4.5
- Length (mm)
- 8
- Pitch (mm)
- 0.8
- Pkg. Dimensions (mm)
- 8.0 x 8.0 x 1.36
- Pkg. Type
- FBGA
- Qualification Level
- PEMS (RH Plastic)
- RDSON (Typ) (mΩ)
- 7.5
- RONN (Ohms) (Ohms)
- 0.5
- RONP (Ohms) (Ohms)
- 2.2
Download datasheets and manufacturer documentation for Renesas ISL73033SLHMKZ.
The ISL73033SLHM is a radiation hardened 100V Gallium Nitride (GaN) FET with an integrated low-side GaN FET driver. The GaN FET are capable of providing up to 45A output and have an RDSON as low as 7.5mΩ. The integrated low-side GaN FET driver has a supply range from 4.5V to 13.2V and can accept logic levels up to 14.7V, regardless of the supply voltage. The ISL73033SLHM has a propagation delay of 42ns, enabling high switching frequency for better power conversion efficiency. The ISL73033SLHM is characterized over the full military temperature range from -55 °C to +125 °C and receives screening similar to QMLV devices. The device is offered in an 81-lead Ball Grid Array (BGA) plastic package.
- Production testing and qualification follow AS6294/1
- 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver
- Wide driver bias range of 4.5V to 13.2V
- Up to 16.5V logic inputs (regardless of VDD level)
- Inverting and non-inverting inputs
- Integrated driver optimized for enhancement-mode GaN FETs
- Internal 4.5V regulated gate drive voltage
- Full military temperature range operation
- TA = -55 °C to +125 °C
- TJ = -55 °C to +150 °C
- Radiation hardness assurance (lot-by-lot)
- Low dose rate (0.01rad(Si)/s): 75krad(Si)
- SEE hardness for Driver (see the SEE test report)
- No SEB/L LETTH, VDD = 16.5V: 86MeV•cm2/mg
- No SET, LETTH, VDD = 13.2V: 86MeV•cm2/mg
- SEE hardness for GaN FET (see the SEE test report)
- No SEB/L LETTH, VDS = 100V: 86MeV•cm2/mg
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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