Renesas ISL71840SEHVX

The ISL71840SEH is a radiation hardened, 16-channel high ESD protected multiplexer fabricated using the Renesas proprietary P6SOI (Silicon On Insulator) process technology to mitigate single-event effects and total ionizing dose. It operates with a dual supply voltage ranging from ±10. 8V to ±16. 5V. It has a 4-bit address plus an enable pin that can be driven with adjustable logic thresholds to conveniently select one of 16 available channels. An inactive channel is separated from an active channel by a high impedance, which inhibits any interaction between them. The ISL71840SEH’s low r_ON allows for improved signal integrity and reduced power losses. The ISL71840SEH is also designed for cold sparing, making it excellent for high reliability applications that have redundancy requirements. It is designed to provide a high impedance to the analog source in a powered off condition, making it easy to add additional backup devices without loading signal sources. The ISL71840SEH also incorporates input analog overvoltage protection, which disables the switch to protect downstream devices. The ISL71840SEH is available in a 28 Ld CDFP or die form and operates across the extended temperature range of -55°C to +125°C. A 32-channel version in a 48 Ld CQFP is also available. Refer to the ISL71841SEH datasheet for more information.

• DLA SMD# 5962-15219
• Fabricated using P6SOI process technology
• Provides latch-up immunity
• ESD protection 8kV (HBM)
• Rail-to-rail operation
• Overvoltage protection
• Low r_ON: <500Ω (typical)
• Flexible split rail operation
• Positive supply above GND (V⁺): +10.8V to +16.5V
• Negative supply below GND (V^-): -10.8V to -16.5V
• Adjustable logic threshold control with VREF pin
• Cold sparing capable (from ground): ±25V
• Analog overvoltage range (from ground): ±35V
• Off switch leakage: 100nA (maximum)
• Transition times (t_R, t_F): 500ns (typical)
• Break-before-make switching
• Grounded metal lid (internally connected)
• Operating temperature range: -55°C to +125°C
• Radiation tolerance
• High dose rate (50-300rad(Si)/s): 100krad(Si)
• Low dose rate (0.01rad(Si)/s): 100krad(Si) (see Note 1)
• SEB LET_TH: 86.4MeV•cm²/mg
  NOTE:
  1. Product capability established by initial characterization. All subsequent lots are assurance tested to 50krad (0.01rad(Si)/s) wafer-by-wafer.