Renesas ISL71441SLHMRZ
Manufacturer No:
ISL71441SLHMRZ
Manufacturer:
Renesas
Package:
Description:
Radiation Hardened 12V Half-Bridge GaN FET Driver
Quantity:
In Stock :4540
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
ISL71441SLHMRZ Information
Renesas ISL71441SLHMRZ technical specifications, attributes, parameters and parts with similar specifications to Renesas ISL71441SLHMRZ.
- Type
- Parameter
- Pkg. Type
- QFN
- Lead Count (#)
- 20
- Carrier Type
- Tray
- Moisture Sensitivity Level (MSL)
- 1
- Pb (Lead) Free
- Yes
- Pb Free Category
- Nickel/Palladium/Gold-Silver - e4
- MOQ
- 25
- Temp. Range
- -55 to +125°C
- CAGE code
- 34371
- Bus Voltage (Max) (V)
- 12
- Type
- Parameter
- DSEE (MeV·cm2/mg)
- 86
- Driver Type
- Half Bridge
- Drivers (#)
- 2
- FET Type
- GaNFET
- Fall Time
- 25
- Flow
- RH Plastic
- Gate Drive (V)
- 4.5 - 5.5
- High Side Fall Time (max) (ns)
- 25
- High Side Rise Time (max) (ns)
- 25
- Input VCC (Max) (V)
- 13.2
Download datasheets and manufacturer documentation for Renesas ISL71441SLHMRZ.
The ISL71441SLH is a radiation hardened PWM input 12V half-bridge GaN FET driver that drives low rDS(ON) Gallium Nitride (GaN) FETs for DC/DC switching regulators. An integrated programmable GaN FET gate drive voltage, high-side bootstrap switch, and strong gate drive current provide a compact and robust GaN FET half-bridge driver.
- Qualified to Renesas Rad Hard Plastic Production and QCI Flow (R34ZZ0006EU)
- All screening and QCI is in accordance with SAE AS6294/1
- Up to 20V bootstrap voltage half-bridge driver
- Programmable 4.5V to 5.5V gate drive voltage
- Single tri-level PWM input control
- Separate source and sink driver outputs
- High-side peak drive: 2A Sourcing, 4A Sinking
- Low-side peak drive: 4A Sourcing, 8A Sinking
- High and low-side programmable dead time control
- Highly matched fast propagation delay: 29ns
- Full military temperature operation: TA = -55°C to 125°C ambient range
- 20Ld plastic 5x5mm QFN package
- TID Rad Hard Assurance (RHA) testing
- LDR (0.01rad(Si)/s): 75krad(Si)
- SEE characterization
- No DSEE with VDD = 20V, PHS = 13.5V, PVCC = 6.5V, and AVCC = 6.3V at LET = 86MeV•cm2/mg
- SEFI <10µm2 at LET = 86MeV•cm2/mg
- No half bridge shoot-through SET at LET = 86MeV•cm2/mg
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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