Renesas ISL71040M30RTZ-T7A
Manufacturer No:
ISL71040M30RTZ-T7A
Manufacturer:
Renesas
Package:
Description:
Radiation Tolerant Low-Side GaN FET Driver
Quantity:
In Stock :3876
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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ISL71040M30RTZ-T7A Information
Renesas ISL71040M30RTZ-T7A technical specifications, attributes, parameters and parts with similar specifications to Renesas ISL71040M30RTZ-T7A.
- Type
- Parameter
- Lead Count (#)
- 8
- Carrier Type
- Reel
- Moisture Sensitivity Level (MSL)
- 1
- Pb (Lead) Free
- Yes
- Pb Free Category
- Nickel/Palladium/Gold-Silver - e4
- MOQ
- 250
- CAGE code
- 34371
- DSEE (MeV·cm2/mg)
- 43
- Driver Type
- Low Side
- Drivers (#)
- 1
- Type
- Parameter
- FET Type
- GaNFET
- Flow
- RT Plastic
- Gate Drive (V)
- 4.5
- Input VCC (Max) (V)
- 13.2
- Input VCC (Min) (V)
- 4.5
- Length (mm)
- 4
- Low Side Fall Time (max) (ns)
- 60
- Low Side Rise Time (max) (ns)
- 90
- Output Type
- Inverting/Non-inverting
- Peak Output Sink Current (A)
- 2.8
Download datasheets and manufacturer documentation for Renesas ISL71040M30RTZ-T7A.
The ISL71040M is a low-side driver designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL71040M operates with a supply voltage from 4. 5V to 13. 2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL71040M has a 4. 5V gate drive voltage (VDRV) generated using an internal regulator that prevents the gate voltage from exceeding the maximum gate-source rating of enhancement mode GaN FETs. The gate drive voltage features an Undervoltage Lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The ISL71040M inputs can withstand voltages up to 14. 7V regardless of the VDD voltage, which allows the inputs to be connected directly to most PWM controllers. The ISL71040M's split outputs offer the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance to the turn-on and turn-off paths. The ISL71040M operates across the military temperature range from -55°C to +125°C and is offered in an 8 Ld Thin Dual Flat No-Lead (TDFN) plastic package.
- Wide operating voltage range of 4.5V to 13.2V
- Up to 14.7V logic inputs (regardless of VDD level) Inverting and non-inverting inputs
- Optimized to drive enhancement mode GaN FETs
- Internal 4.5V regulated gate drive voltage
- Independent outputs for adjustable turn-on/turn-off speeds
- NiPdAu-Ag Lead finish (Sn-free, Pb-free)
- Moisture Sensitivity Level (MSL) Rating: 1
- Passes NASA Low Outgassing Specifications
- Full military temperature range operation
- TA = -55°C to +125°C
- TJ = -55°C to +150°C
- Characterized radiation levels
- Low Dose Rate (LDR) <0.01rad(Si)/s : 30krad(Si)
- No SEB/L, VDD = 16.5V : 43MeV•cm2/mg
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