Renesas ISL70024SEHMX
Manufacturer No:
ISL70024SEHMX
Manufacturer:
Renesas
Package:
Description:
200V, 7.5A Enhancement Mode GaN Power Transistor
Quantity:
In Stock :1677
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
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Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
ISL70024SEHMX Information
Renesas ISL70024SEHMX technical specifications, attributes, parameters and parts with similar specifications to Renesas ISL70024SEHMX.
- Type
- Parameter
- Pkg. Type
- DIE
- Qualification Level
- Class Ve
- Pb (Lead) Free
- No
- MOQ
- 100
- Temp. Range
- -55 to +125°C
- CAGE code
- 34371
- DSEE (MeV·cm2/mg)
- 86
- Flow
- RH Hermetic
- IDS (A)
- 7.5
- Lead Compliant
- No
- Type
- Parameter
- Models Available
- SPICE
- Qg typ (nC)
- 14
- RDSON (Typ) (mΩ)
- 45
- Rating
- Space
- TID HDR (krad(Si))
- 100
- TID LDR (krad(Si))
- 75
- Tape & Reel
- No
- Thermal Resistance θJC (°C/W)
- 18.7
- VDS (V)
- 200
- VGS (Max) (V)
- 6
Download datasheets and manufacturer documentation for Renesas ISL70024SEHMX.
The ISL70024SEH is a 200V N-channel enhancement mode GaN power transistor. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and near zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. By combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high reliability applications.
- Very low rDS(ON) 45mΩ (typical)
- Ultra low total gate charge 2.5nC (typical)
- SEE hardness (see SEE report for details)
- SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg
- Radiation acceptance (see TID report)
- High dose rate (50-300rad(Si)/s): 100krad(Si)
- Low dose rate (0.01rad(Si)/s) : 75krad(Si)
- Ultra small hermetically sealed 4 Ld Surface Mount Device (SMD) package
- Package area: 42mm2
- Full military-temperature range operation
- TA = -55°C to +125°C
- TJ = -55°C to +150°C
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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