Renesas ISL70024SEHL/PROTO
Manufacturer No:
ISL70024SEHL/PROTO
Manufacturer:
Renesas
Package:
Description:
200V, 7.5A Enhancement Mode GaN Power Transistor
Quantity:
In Stock :8989
Looking for price or availability? Send us an RFQ and our sales team will respond quickly.
Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Sat, May 30 - Sun, May 31, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
Payment
We support multiple secure payment methods including PayPal, Visa, MasterCard, and American Express. All transactions are protected with advanced encryption to ensure secure and reliable payments.
Authenticity Guarantee
All components supplied by Aichiplink are sourced from trusted global suppliers and verified through strict in-house inspection and quality control procedures.
Quality Assurance
Certified in-house inspection and testing facilities ensure all components meet internationally recognized quality standards.
User Guide
Aichiplink operates certified in-house inspection and testing facilities to ensure all electronic components meet internationally recognized quality and compliance standards. Our quality management system is verified through ISO 9001 certification and industry-standard inspection procedures.
PURCHASE
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
MEANS OF PAYMENTFor your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and Wire Transfer. Net terms may be available for qualified customers upon approval.
RFQ (REQUEST FOR QUOTATIONS)Please ensure the part numbers and quantities are accurate and complete when submitting your RFQ.
Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
ISL70024SEHL/PROTO Information
Renesas ISL70024SEHL/PROTO technical specifications, attributes, parameters and parts with similar specifications to Renesas ISL70024SEHL/PROTO.
- Type
- Parameter
- Pkg. Type
- CLCC
- Lead Count (#)
- 4
- Carrier Type
- Tray
- Moisture Sensitivity Level (MSL)
- Not Applicable
- Qualification Level
- EM
- Pb (Lead) Free
- Yes
- Pb Free Category
- Gold Plate over compliant Undercoat-e4
- MOQ
- 1
- Temp. Range
- -55 to +125°C
- CAGE code
- 34371
- Type
- Parameter
- DSEE (MeV·cm2/mg)
- 86
- Flow
- RH Hermetic
- IDS (A)
- 7.5
- Length (mm)
- 9
- Models Available
- SPICE
- Pitch (mm)
- 0
- Pkg. Dimensions (mm)
- 9.0 x 4.7 x 1.83
- Qg typ (nC)
- 14
- RDSON (Typ) (mΩ)
- 45
- Rating
- Space
Download datasheets and manufacturer documentation for Renesas ISL70024SEHL/PROTO.
The ISL70024SEH is a 200V N-channel enhancement mode GaN power transistor. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and near zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. By combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high reliability applications.
- Very low rDS(ON) 45mΩ (typical)
- Ultra low total gate charge 2.5nC (typical)
- SEE hardness (see SEE report for details)
- SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg
- Radiation acceptance (see TID report)
- High dose rate (50-300rad(Si)/s): 100krad(Si)
- Low dose rate (0.01rad(Si)/s) : 75krad(Si)
- Ultra small hermetically sealed 4 Ld Surface Mount Device (SMD) package
- Package area: 42mm2
- Full military-temperature range operation
- TA = -55°C to +125°C
- TJ = -55°C to +150°C
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
.png&w=256&q=75)
