Renesas ISL70020SEHMX
Manufacturer No:
ISL70020SEHMX
Manufacturer:
Renesas
Package:
Description:
40V, 65A Enhancement Mode GaN Power Transistor
Quantity:
In Stock :5347
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
ISL70020SEHMX Information
Renesas ISL70020SEHMX technical specifications, attributes, parameters and parts with similar specifications to Renesas ISL70020SEHMX.
- Type
- Parameter
- Pkg. Type
- DIE
- Qualification Level
- Class Ve
- Pb (Lead) Free
- No
- MOQ
- 100
- Temp. Range
- -55 to +125°C
- CAGE code
- 34371
- DSEE (MeV·cm2/mg)
- 86
- Flow
- RH Hermetic
- IDS (A)
- 65
- Lead Compliant
- No
- Type
- Parameter
- Models Available
- SPICE
- Qg typ (nC)
- 19
- RDSON (Typ) (mΩ)
- 3.5
- Rating
- Space
- TID HDR (krad(Si))
- 100
- TID LDR (krad(Si))
- 75
- Tape & Reel
- No
- Thermal Resistance θJC (°C/W)
- 3.1
- VDS (V)
- 40
- VGS (Max) (V)
- 6
Download datasheets and manufacturer documentation for Renesas ISL70020SEHMX.
The ISL70020SEH is a 40V N-channel enhancement mode GaN power transistor. This GaN FET has been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. The exceptionally high electron mobility and low temperature coefficient of the GaN allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. By combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high reliability applications.
- Very low rDS(ON) 3.5mΩ (typical)
- Ultra low total gate charge 19nC (typical)
- Radiation acceptance testing
- High dose rate (50-300rad(Si)/s): 100krad(Si)
- Low dose rate (0.01rad(Si)/s): 75krad(Si)
- SEE hardness (see the SEE report for details)
- SEL/SEB LETTH (VDS = 40V, VGS = 0V): 86.4MeV•cm2/mg
- Ultra small hermetically sealed 4 Ld Surface Mount Device (SMD) package
- Package area: 42mm2
- Full military-temperature range operation
- TA = -55°C to +125°C
- TJ = -55°C to +150°C
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
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In-stock SKU
15,000+
Warehouse Area(㎡)
