Renesas IS7-1845ASEH-Q
Manufacturer No:
IS7-1845ASEH-Q
Manufacturer:
Renesas
Package:
Description:
Single Event Radiation Hardened High Speed, Current Mode PWM
Quantity:
In Stock :8149
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Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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IS7-1845ASEH-Q Information
Renesas IS7-1845ASEH-Q technical specifications, attributes, parameters and parts with similar specifications to Renesas IS7-1845ASEH-Q.
- Type
- Parameter
- Pkg. Type
- SBDIP
- Lead Count (#)
- 8
- Carrier Type
- Tray
- Moisture Sensitivity Level (MSL)
- Not Applicable
- Pitch (mm)
- 2.5
- Pkg. Dimensions (mm)
- 9.9 x 7.4 x 2.41
- DLA SMD
- 5962F0150902VPC
- Pb (Lead) Free
- Exempt
- Pb Free Category
- Gold Plate over compliant Undercoat-e4
- MOQ
- 25
- Type
- Parameter
- Temp. Range
- -55 to +125°C
- CAGE code
- 34371
- Control Mode
- Voltage, Peak Current Mode
- DSEE (MeV·cm2/mg)
- 89.1
- Duty Cycle (Max) (%)
- 50
- Flow
- RH Hermetic
- Length (mm)
- 9.9
- No-Load Operating Current
- 17
- Operating Freq (Max) (MHz)
- 0.5
- Phases (Max)
- 1
Download datasheets and manufacturer documentation for Renesas IS7-1845ASEH-Q.
The IS-1845ASRH, IS-1845ASEH are designed to be used in switching power supplies operating in current-mode. The rising edge of the on-chip oscillator turns on the output. Turn-off is controlled by the current sense comparator and occurs when the sensed current reaches a peak controlled by the error amplifier. Constructed with Renesas' Rad Hard Silicon Gate (RSG) dielectrically isolated BiCMOS process, these devices are immune to single event latch-up and have been specifically designed to provide a high level of immunity to single event transients. All specified parameters are ensured and tested for 300krad(Si) total dose performance at a high dose rate and 50krad(Si) total dose at a low dose rate. Detailed Electrical Specifications for these devices are contained in the SMD 5962-01509.
- Electrically screened to DSCC SMD # 5962-01509
- QML qualified per MIL-PRF-38535 requirements
- Radiation environment
- High Dose Rate: 300krad(SI) (Max)
- Low Dose Rate: 50krad(SI) (Max)
- SEL immune: Dielectrically isolated
- SEU immune: 35MeV/mg/cm2
- SEU cross-section at 89MeV/mg/cm2: 5x10-6cm2
- Low start-up current: 100µA (Typ)
- Fast propagation delay: 80ns (Typ)
- Supply voltage range: 12V to 20V
- High output drive: 1A (Peak, Typ)
- Undervoltage lockout: 8.8V start (Typ), 8.2V stop (Typ)
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