Renesas IS2-1009EH-Q
Manufacturer No:
IS2-1009EH-Q
Manufacturer:
Renesas
Package:
Description:
Radiation Hardened 2.5V Reference
Quantity:
In Stock :4252
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Expected Shipping：Sat, May 30 - Sun, May 31, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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IS2-1009EH-Q Information
Renesas IS2-1009EH-Q technical specifications, attributes, parameters and parts with similar specifications to Renesas IS2-1009EH-Q.
- Type
- Parameter
- Lead Count (#)
- 3
- Carrier Type
- Tray
- Moisture Sensitivity Level (MSL)
- Not Applicable
- Pitch (mm)
- 2.5
- Pkg. Dimensions (mm)
- 0.0 x 5.4 x 0.00
- DLA SMD
- 5962F0052302VXC
- Pb (Lead) Free
- Yes
- Pb Free Category
- Gold Plate over compliant Undercoat-e4
- MOQ
- 25
- Temp. Range
- -55 to +125°C
- Type
- Parameter
- Accuracy
- ±0.4%
- Accuracy Over Temperature (±%)
- 0.2
- CAGE code
- 34371
- Change in VZ vs Current (mV)
- 6
- DSEE (MeV·cm2/mg)
- 80
- Flow
- RH Hermetic
- Input Current Range
- 400µA to 10mA
- Input Voltage Range (V)
- .006 - .006
- Length (mm)
- 0
- Pkg. Type
- CAN
Download datasheets and manufacturer documentation for Renesas IS2-1009EH-Q.
The Star*Power™ Radiation Hardened IS-1009RH, IS-1009EH are a 2.5V shunt regulator diode is designed to provide a stable 2.5V reference over a wide current range. These devices are designed to maintain stability over the full military temperature range and over time. The 0.2% reference tolerance is achieved by on-chip trimming. An adjustment terminal is provided to allow for the calibration of system errors. The use of this terminal to adjust the reference voltage does not effect the temperature coefficient. Constructed with the Intersil dielectrically isolated EBHF process, these devices are immune to single event latch-up and have been specifically designed to provide highly reliable performance in harsh radiation environments. The IS-1009EH replaces the obsoleted IS-1009RH. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-00523.
- Electrically screened to SMD 5962-00523
- QML qualified per MIL-PRF-38535 requirements
- EH version acceptance tested to 50krad(Si) (LDR)
- Radiation environment
- High dose rate (50-300rad(Si)/s): 300 krad(Si)
- Low dose rate (0.01rad(Si)/s): 50krad(Si)
- Latch-up immune: dielectrically isolated
- Reverse breakdown voltage (VZ): 2.5V
- Change in VZ vs current (400µA to 10mA): 6mV
- Change in VZ vs temperature (-55°C to +125°C): 15mV
- Maximum reverse breakdown current: 20mA
- Stability Criteria
- Optimum stability is achieved with CL = 10µF between V+ and V- for heavy loads
- Instability region with self-sustaining oscillations is from CL = 1nF to 3µF
- Interchangeable with 1009 and 136 industry types
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