Renesas IS1-1825ASRH-Q
Manufacturer No:
IS1-1825ASRH-Q
Manufacturer:
Renesas
Package:
Description:
Single Event and Total Dose Hardened, High-speed, Dual Output PWMs
Quantity:
In Stock :6549
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IS1-1825ASRH-Q Information
Renesas IS1-1825ASRH-Q technical specifications, attributes, parameters and parts with similar specifications to Renesas IS1-1825ASRH-Q.
- Type
- Parameter
- Pkg. Type
- SBDIP
- Lead Count (#)
- 16
- Carrier Type
- Tube
- Moisture Sensitivity Level (MSL)
- Not Applicable
- Pitch (mm)
- 2.5
- Pkg. Dimensions (mm)
- 20.3 x 7.5 x 2.41
- DLA SMD
- 5962F0251101VEC
- Pb (Lead) Free
- Exempt
- Pb Free Category
- Gold Plate over compliant Undercoat-e4
- MOQ
- 25
- Type
- Parameter
- Temp. Range
- -55 to +125°C
- CAGE code
- 34371
- Control Mode
- Voltage, Peak Current Mode
- DSEE (MeV·cm2/mg)
- 86.3
- Duty Cycle (Max) (%)
- 50
- Flow
- RH Hermetic
- Length (mm)
- 20.3
- Models Available
- iSIM
- No-Load Operating Current
- 25
- Operating Freq (Max) (MHz)
- 0.5
Download datasheets and manufacturer documentation for Renesas IS1-1825ASRH-Q.
The IS-1825ASRH, IS-1825BSRH, IS-1825BSEH, ISL71823ASRH, and ISL71823BSRH are single event and total dose hardened pulse width modulators designed to be used in high-frequency switching power supplies in either voltage or current-mode configurations. These devices include a precision voltage reference, a low power start-up circuit, a high-frequency oscillator, a wide-band error amplifier, and a fast current-limit comparator. The IS-1825xSRH and IS-1825xSEH feature dual, alternating output operating from zero to less than 50% duty cycle, and the ISL71823xSRH features dual in-phase output operating from zero to less than 100% duty cycle. The B versions of the parts test the delay from clock out to PWM output switching after power has been applied to the modulator (tPWM). The SEH parts are wafer-by-wafer acceptance tested to 50krad(Si) at a low dose rate of <10mrad(Si)/s. Constructed with the Rad Hard Silicon Gate (RSG) dielectrically isolated BiCMOS process, these devices are immune to single-event latch-up and have been specifically designed to provide a high level of immunity to single-event transients. All specified parameters are established and tested for 300krad(Si) total dose performance. The devices are offered in a 16 Ld CDIP or a 20 Ld CDFP and fully specified to across the temperature range of -50 °C to +125 °C.
- Electrically screened to DLA SMD# 5962-02511
- QML qualified per MIL-PRF-38535 requirements
- EH version is wafer-by-wafer acceptance tested to 50krad(Si) LDR
- Oscillator frequency: 1MHz (max)
- High output drive current: 1A peak (typ)
- Low startup current: 300μA (max)
- Undervoltage Lockout
- Start threshold: 8.8V (max)
- Stop threshold: 7.6V (min)
- Hysteresis: 300mV (min)
- Pulse-by-pulse current limiting
- Programmable leading edge blanking
- Radiation Hardness
- High Dose Rate (HDR) (50-300rad(Si)/s): 300krad(Si)
- Low Lose Rate (LDR) (0.01rad(Si)/s): 50krad(Si)
- Latch-up immune (dielectrically isolated)
- SEU immune: LET= 35MeV•cm2/mg
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12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
