INFINEON IRLZ44NSTRRPBF
Manufacturer No:
IRLZ44NSTRRPBF
Manufacturer:
INFINEON
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 22mOhm @ 25A, 10V ±16V 1700pF @ 25V 48nC @ 5V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :9333
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Shipped from：HK Warehouse
Expected Shipping：Sat, Jun 13 - Sun, Jun 14, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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IRLZ44NSTRRPBF Information
INFINEON IRLZ44NSTRRPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRLZ44NSTRRPBF.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins
- 3
- Supplier Device Package
- D2PAK
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- HEXFET®
- Published
- 2004
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Max Operating Temperature
- 175°C
- Min Operating Temperature
- -55°C
- Voltage - Rated DC
- 55V
- Technology
- MOSFET (Metal Oxide)
- Current Rating
- 47A
- Number of Elements
- 1
- Power Dissipation-Max
- 3.8W Ta 110W Tc
- Element Configuration
- Single
- Power Dissipation
- 110W
Download datasheets and manufacturer documentation for INFINEON IRLZ44NSTRRPBF.
Other Related Documents:
PCN Design/Specification:
ConflictMineralStatement:
IRLZ44NSTRRPBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1700pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 47A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=55V. And this device has 55V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 26 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 35mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 16V.Operating this transistor requires a 55V drain to source voltage (Vdss).By using drive voltage (4V 10V), this device helps reduce its overall power consumption.
IRLZ44NSTRRPBF Features
a continuous drain current (ID) of 47A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 26 ns
single MOSFETs transistor is 35mOhm
a 55V drain to source voltage (Vdss)
IRLZ44NSTRRPBF Applications
There are a lot of Infineon Technologies
IRLZ44NSTRRPBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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