INFINEON IRLR8103VPBF
Manufacturer No:
IRLR8103VPBF
Manufacturer:
INFINEON
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tube 9m ? @ 15A, 10V ±20V 2672pF @ 16V 27nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :2284
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRLR8103VPBF Information
INFINEON IRLR8103VPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRLR8103VPBF.
- Type
- Parameter
- Contact Plating
- Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins
- 3
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2004
- Part Status
- Discontinued
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- ECCN Code
- EAR99
- Resistance
- 9mOhm
- Voltage - Rated DC
- 30V
- Technology
- MOSFET (Metal Oxide)
- Current Rating
- 89A
- Number of Elements
- 1
- Power Dissipation-Max
- 115W Tc
- Element Configuration
- Single
- Power Dissipation
- 89W
Download datasheets and manufacturer documentation for INFINEON IRLR8103VPBF.
Other Related Documents:
PCN Assembly/Origin:
PCN Packaging:
ConflictMineralStatement:
IRLR8103VPBF Overview
A device's maximal input capacitance is 2672pF @ 16V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 91A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 24 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3V threshold voltage.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
IRLR8103VPBF Features
a continuous drain current (ID) of 91A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 24 ns
a threshold voltage of 3V
IRLR8103VPBF Applications
There are a lot of Infineon Technologies
IRLR8103VPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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