INFINEON IRLR3715ZTRRPBF

Manufacturer No:

IRLR3715ZTRRPBF

Manufacturer:

INFINEON

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 11mOhm @ 15A, 10V ±20V 810pF @ 10V 11nC @ 4.5V 20V TO-252-3, DPak (2 Leads + Tab), SC-63

Quantity:

In Stock :2362

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

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3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRLR3715ZTRRPBF Information

INFINEON IRLR3715ZTRRPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRLR3715ZTRRPBF.

Type
Parameter

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins
3

Supplier Device Package
D-Pak

Operating Temperature
-55°C~175°C TJ

Packaging
Tape & Reel (TR)

Series
HEXFET®

Published
2003

Part Status
Obsolete

Type
Parameter

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Max Operating Temperature
175°C

Min Operating Temperature
-55°C

Technology
MOSFET (Metal Oxide)

Current Rating
49A

Power Dissipation-Max
40W Tc

Element Configuration
Single

Power Dissipation
40W

Turn On Delay Time
7.8 ns

FET Type
N-Channel

Download datasheets and manufacturer documentation for INFINEON IRLR3715ZTRRPBF.

Datasheets:

infineontechnologies-irlr3715ztr-datasheets-6069.pdf

infineon-irlr3715ztrrpbf-datasheets-4428.pdf

infineon-irlr3715ztrrpbf-datasheets-4429.pdf

ConflictMineralStatement:

infineon-b43821a4225m000-conflictmineralstatement-7662.pdf

IRLR3715ZTRRPBF Overview

A device's maximal input capacitance is 810pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 49A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 10 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 11mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7.8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

IRLR3715ZTRRPBF Features

a continuous drain current (ID) of 49A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 10 ns
single MOSFETs transistor is 11mOhm
a 20V drain to source voltage (Vdss)