INFINEON IRLR3715PBF

Manufacturer No:

IRLR3715PBF

Manufacturer:

INFINEON

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) N-Channel Tube 14mOhm @ 26A, 10V ±20V 1060pF @ 10V 17nC @ 4.5V 20V TO-252-3, DPak (2 Leads + Tab), SC-63

Quantity:

In Stock :9825

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

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3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRLR3715PBF Information

INFINEON IRLR3715PBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRLR3715PBF.

Type
Parameter

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins
4

Supplier Device Package
D-Pak

Operating Temperature
-55°C~175°C TJ

Packaging
Tube

Series
HEXFET®

Published
2001

Part Status
Obsolete

Type
Parameter

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Resistance
14MOhm

Max Operating Temperature
175°C

Min Operating Temperature
-55°C

Voltage - Rated DC
20V

Technology
MOSFET (Metal Oxide)

Current Rating
54A

Number of Elements
1

Power Dissipation-Max
3.8W Ta 71W Tc

Power Dissipation
71W

Download datasheets and manufacturer documentation for INFINEON IRLR3715PBF.

ConflictMineralStatement:

infineon-b43821a4225m000-conflictmineralstatement-7662.pdf

IRLR3715PBF Overview

The maximum input capacitance of this device is 1060pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 54A.When VGS=20V, and ID flows to VDS at 20VVDS, the drain-source breakdown voltage is 20V in this device.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 20mOhm.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 3V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

IRLR3715PBF Features

a continuous drain current (ID) of 54A
a drain-to-source breakdown voltage of 20V voltage
single MOSFETs transistor is 20mOhm
a threshold voltage of 3V
a 20V drain to source voltage (Vdss)