INFINEON IRLR3303PBF
Manufacturer No:
IRLR3303PBF
Manufacturer:
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tube 31mOhm @ 21A, 10V ±16V 870pF @ 25V 26nC @ 4.5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :5758
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Step2：Desiccant Protection
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Step5：Anti-collision Filling
Step6：Packaging Box
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IRLR3303PBF Information
INFINEON IRLR3303PBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRLR3303PBF.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins
- 3
- Supplier Device Package
- D-Pak
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2004
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Resistance
- 31mOhm
- Max Operating Temperature
- 175°C
- Min Operating Temperature
- -55°C
- Voltage - Rated DC
- 30V
- Technology
- MOSFET (Metal Oxide)
- Current Rating
- 35A
- Number of Elements
- 1
- Power Dissipation-Max
- 68W Tc
- Element Configuration
- Single
Download datasheets and manufacturer documentation for INFINEON IRLR3303PBF.
Datasheets:
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ConflictMineralStatement:
IRLR3303PBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 870pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 14 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 45mOhm.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 16VV.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
IRLR3303PBF Features
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 45mOhm
a 30V drain to source voltage (Vdss)
IRLR3303PBF Applications
There are a lot of Infineon Technologies
IRLR3303PBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
IRLR3303PBF Relevant information
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