

INFINEON IRLR3103PBF
Manufacturer No:
IRLR3103PBF
Manufacturer:
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tube 19m ? @ 33A, 10V ±16V 1600pF @ 25V 50nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:


In Stock :8417
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Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRLR3103PBF Information
INFINEON IRLR3103PBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRLR3103PBF.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 1998
- JESD-609 Code
- e3
- Type
- Parameter
- Part Status
- Discontinued
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Resistance
- 19mOhm
- Terminal Finish
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Additional Feature
- LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 30V
- Technology
- MOSFET (Metal Oxide)
Download datasheets and manufacturer documentation for INFINEON IRLR3103PBF.
Datasheets:
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PCN Assembly/Origin:
PCN Packaging:
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ConflictMineralStatement:
IRLR3103PBF Description
International Rectifier's Fifth Generation HEXFETs use cutting-edge manufacturing methods to provide the lowest on-resistance per silicon area. This feature gives the designer a very effective device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are widely known for.
The D-PAK is made to be surface mounted utilizing infrared, vapor phase, or wave soldering methods. For throughhole mounting applications, use the straight lead version (IRFU series). In normal surface mount applications, power dissipation levels of up to 1.5 watts are conceivable.
IRLR3103PBF Features
Logic-Level Gate Drive
Ultra Low On-Resistance
Surface Mount (IRLR3103)
Straight Lead (IRLU3103)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
IRLR3103PBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRLR3103PBF Relevant information
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