

INFINEON IRLR120NPBF
Manufacturer No:
IRLR120NPBF
Manufacturer:
INFINEON
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tube 185m ? @ 6A, 10V ±16V 440pF @ 25V 20nC @ 5V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:


In Stock :4635
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Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRLR120NPBF Information
INFINEON IRLR120NPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRLR120NPBF.
- Type
- Parameter
- Factory Lead Time
- 39 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 1998
- Part Status
- Discontinued
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- ECCN Code
- EAR99
- Type
- Parameter
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 48W Tc
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 185m ? @ 6A, 10V
- Vgs(th) (Max) @ Id
- 2V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 440pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 10A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 20nC @ 5V
- Drain to Source Voltage (Vdss)
- 100V
- Drive Voltage (Max Rds On,Min Rds On)
- 4V 10V
Download datasheets and manufacturer documentation for INFINEON IRLR120NPBF.
Other Related Documents:
IRLR120NPBF Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical
surface mount applications.
IRLR120NPBF Features
Surface Mount (IRL R120N)
Straight Lead (IRLU120N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
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