

INFINEON IRLR024NPBF
Manufacturer No:
IRLR024NPBF
Manufacturer:
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tube 65m ? @ 10A, 10V ±16V 480pF @ 25V 15nC @ 5V 55V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:


In Stock :7513
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Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRLR024NPBF Information
INFINEON IRLR024NPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRLR024NPBF.
- Type
- Parameter
- Factory Lead Time
- 20 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2000
- Part Status
- Discontinued
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- ECCN Code
- EAR99
- Type
- Parameter
- Technology
- MOSFET (Metal Oxide)
- Reach Compliance Code
- not_compliant
- Power Dissipation-Max
- 45W Tc
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 65m ? @ 10A, 10V
- Vgs(th) (Max) @ Id
- 2V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 480pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 17A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 15nC @ 5V
- Drain to Source Voltage (Vdss)
- 55V
Download datasheets and manufacturer documentation for INFINEON IRLR024NPBF.
Other Related Documents:
PCN Assembly/Origin:
IRLR024NPBF Description
International Rectifier's Fifth Generation HEXFET? Power MOSFETs use cutting-edge processing methods to deliver the lowest onresistance per silicon area. This feature gives the designer a very effective device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET power MOSFETs are widely known for.
The D-PAK is made to be surface mounted utilizing infrared, vapor phase, or wave soldering methods. For through-hole mounting uses, use the straight lead version (IRFU series). In normal surface mount applications, power dissipation levels of up to 1.5 watts are conceivable.
IRLR024NPBF Features
Logic-Level Gate Drive
Surface Mount (IRLR024N)
Straight Lead (IRLU024N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
IRLR024NPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRLR024NPBF Relevant information
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