

INFINEON IRLML2502GTRPBF
Manufacturer No:
IRLML2502GTRPBF
Manufacturer:
Package:
TO-236-3, SC-59, SOT-23-3
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 45m ? @ 4.2A, 4.5V ±12V 740pF @ 15V 12nC @ 5V TO-236-3, SC-59, SOT-23-3
Quantity:


In Stock :5316
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Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRLML2502GTRPBF Information
INFINEON IRLML2502GTRPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRLML2502GTRPBF.
- Type
- Parameter
- Factory Lead Time
- 10 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- HEXFET®
- Published
- 2008
- Type
- Parameter
- JESD-609 Code
- e3
- Part Status
- Discontinued
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Resistance
- 45MOhm
- Terminal Finish
- Matte Tin (Sn)
- Additional Feature
- HIGH RELIABILITY
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
Download datasheets and manufacturer documentation for INFINEON IRLML2502GTRPBF.
Other Related Documents:
PCN Packaging:
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IRLML2502GTRPBF Description
IRLML2502GTRPBF is a kind of N-channel HEXFET? power MOSFETs designed based on advanced processing techniques to make extremely low on-resistance per silicon area possible. Moreover, IRLML2502GTRPBF is designed with the characteristics that HEXFET? power MOSFETs provide, including fast switching speed and ruggedized device design. All these make the device more efficient and reliable for battery and load management.
IRLML2502GTRPBF Features
Ultra-low on-resistance
Advanced processing techniques
Fast switching speed
Ruggedized device design
Available in the Micro3? package
IRLML2502GTRPBF Applications
Battery management
Load management
IRLML2502GTRPBF Relevant information
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