

INFINEON IRLL024ZPBF
Manufacturer No:
IRLL024ZPBF
Manufacturer:
Package:
TO-261-4, TO-261AA
Description:
MOSFET (Metal Oxide) N-Channel Tube 60m ? @ 3A, 10V ±16V 380pF @ 25V 11nC @ 5V TO-261-4, TO-261AA
Quantity:


In Stock :9779
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRLL024ZPBF Information
INFINEON IRLL024ZPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRLL024ZPBF.
- Type
- Parameter
- Factory Lead Time
- 10 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Number of Pins
- 3
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 1999
- Part Status
- Discontinued
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- ECCN Code
- EAR99
- Resistance
- 60MOhm
- Voltage - Rated DC
- 55V
- Technology
- MOSFET (Metal Oxide)
- Current Rating
- 5A
- Number of Elements
- 1
- Power Dissipation-Max
- 1W Ta
- Element Configuration
- Single
- Power Dissipation
- 2.8W
Download datasheets and manufacturer documentation for INFINEON IRLL024ZPBF.
Other Related Documents:
PCN Packaging:
ConflictMineralStatement:
IRLL024ZPBF Description
The IRLL024ZPBF is a HEXFET? single N-channel Power MOSFET utilizing the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These features combine to make this IRLL024ZPBF an extremely efficient and reliable device for use in a wide variety of applications
IRLL024ZPBF Features
Advanced Process Technology
Ultra-Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
IRLL024ZPBF Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
IRLL024ZPBF Relevant information
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