

INFINEON IRLL024Z
Manufacturer No:
IRLL024Z
Manufacturer:
Package:
TO-261-4, TO-261AA
Description:
MOSFET (Metal Oxide) N-Channel Tube 60m ? @ 3A, 10V ±16V 380pF @ 25V 11nC @ 5V 55V TO-261-4, TO-261AA
Quantity:


In Stock :9063
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRLL024Z Information
INFINEON IRLL024Z technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRLL024Z.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2004
- JESD-609 Code
- e0
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- ECCN Code
- EAR99
- Terminal Finish
- TIN LEAD
- Additional Feature
- HIGH RELIABILITY
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 245
- Time@Peak Reflow Temperature-Max (s)
- 30
Download datasheets and manufacturer documentation for INFINEON IRLL024Z.
Other Related Documents:
IRLL024Z Description
The IRLL024Z HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
IRLL024Z Features
Advanced Process Technology
Ultra Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Non-RoHS Compliant
IRLL024Z Applications
Switching Applications
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
IRLL024Z Relevant information
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