VISHAY IRLL014TR

Manufacturer No:

IRLL014TR

Manufacturer:

VISHAY

Package:

SOIC-4

Description:

Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOIC-4

Quantity:

In Stock :7633

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRLL014TR Information

VISHAY IRLL014TR technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRLL014TR.

Type
Parameter

RoHS Status
Non-RoHS Compliant

Part Life Cycle Code
Obsolete

Ihs Manufacturer
VISHAY SILICONIX

Part Package Code
TO-261AA

Package Description
SOIC-4

Pin Count
4

Reach Compliance Code
compliant

ECCN Code
EAR99

Samacsys Manufacturer
Vishay

Additional Feature
LOGIC LEVEL COMPATIBLE

Type
Parameter

Avalanche Energy Rating (Eas)
100 mJ

Case Connection
DRAIN

Configuration
SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min
60 V

Drain Current-Max (ID)
2.7 A

Drain-source On Resistance-Max
0.2 Ω

FET Technology
METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code
TO-261AA

JESD-30 Code
R-PDSO-G3

JESD-609 Code
e0

Download datasheets and manufacturer documentation for VISHAY IRLL014TR.

Datasheets:

SILXS25536-1.pdf

IRLL014TR Overview

A device's maximal input capacitance is 400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2.7A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 17 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.3 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.This device reduces its overall power consumption by using drive voltage (4V 5V).