INFINEON IRL1004STRLPBF
Manufacturer No:
IRL1004STRLPBF
Manufacturer:
INFINEON
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 6.5m ? @ 78A, 10V ±16V 5330pF @ 25V 100nC @ 4.5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :7702
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Shipped from：HK Warehouse
Expected Shipping：Fri, Jun 12 - Sat, Jun 13, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRL1004STRLPBF Information
INFINEON IRL1004STRLPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRL1004STRLPBF.
- Type
- Parameter
- Factory Lead Time
- 14 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- HEXFET®
- Published
- 2004
- Type
- Parameter
- JESD-609 Code
- e3
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Additional Feature
- AVALANCHE RATED, HIGH RELIABILITY
- Technology
- MOSFET (Metal Oxide)
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
Download datasheets and manufacturer documentation for INFINEON IRL1004STRLPBF.
Datasheets:
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PCN Obsolescence/ EOL:
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IRL1004STRLPBF Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 700 mJ.The maximum input capacitance of this device is 5330pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 130A.When VGS=40V, and ID flows to VDS at 40VVDS, the drain-source breakdown voltage is 40V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 25 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 520A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 16 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
IRL1004STRLPBF Features
the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 130A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 520A.
IRL1004STRLPBF Applications
There are a lot of Infineon Technologies
IRL1004STRLPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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12.28 M
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