INFINEON IRG7CH54K10EF-R
Manufacturer No:
IRG7CH54K10EF-R
Manufacturer:
INFINEON
Package:
Die
Description:
Quantity:
In Stock :9983
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRG7CH54K10EF-R Information
INFINEON IRG7CH54K10EF-R technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRG7CH54K10EF-R.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- Die
- Operating Temperature
- -40°C~175°C TJ
- Packaging
- Bulk
- Published
- 2012
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- Not Applicable
- Input Type
- Standard
- Voltage - Collector Emitter Breakdown (Max)
- 1200V
- Type
- Parameter
- Test Condition
- 600V, 50A, 5 ?, 15V
- Vce(on) (Max) @ Vge, Ic
- 1.5V @ 15V, 10A
- Gate Charge
- 290nC
- Td (on/off) @ 25°C
- 75ns/305ns
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for INFINEON IRG7CH54K10EF-R.
Other Related Documents:
IRG7CH54K10EF-R Description
The IRG7CH54K10EF-R is a Single IGBTs. The BJT and MOSFET are combined to form the IGBT or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low-voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.
IRG7CH54K10EF-R Features
Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
10?s Short Circuit SOA and Square RBSOA
Low VCE(ON) and switching Losses
VCES = 1200V
IC(Nominal) = 50A
TJ(max) = 175°C
VCE(on) typ = 1.9V @ IC= 50A
IRG7CH54K10EF-R Applications
Medium Power Drives
UPS
HEV Inverter
Welding
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