INFINEON IRG4PC40KDPBF
Manufacturer No:
IRG4PC40KDPBF
Manufacturer:
INFINEON
Package:
TO-247-3
Description:
Quantity:
In Stock :6480
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Shipped from：HK Warehouse
Expected Shipping：Sat, Jun 6 - Sun, Jun 7, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRG4PC40KDPBF Information
INFINEON IRG4PC40KDPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRG4PC40KDPBF.
- Type
- Parameter
- Factory Lead Time
- 14 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Published
- 2000
- Part Status
- Last Time Buy
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Subcategory
- Insulated Gate BIP Transistors
- Voltage - Rated DC
- 600V
- Max Power Dissipation
- 160W
- Current Rating
- 42A
- Number of Elements
- 1
- Element Configuration
- Single
- Power Dissipation
- 160W
Download datasheets and manufacturer documentation for INFINEON IRG4PC40KDPBF.
Other Related Documents:
PCN Obsolescence/ EOL:
PCN Packaging:
ConflictMineralStatement:
Description
The IRG4PC40KDPBF is an Insulated Gate Bipolar Transistor with a soft recovery diode that operates at ultrafast speeds. It is designed for high operating frequencies of >5kHz and has a short-circuit rating of 10?s at 125°C with VGE = 15V. The generation 4 IGBT design is more efficient and has a narrower parameter distribution than the generation 3 design. For usage in bridge designs, the IGBT comes with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes. The IGBT performance of the HEXFREDTM diodes was optimized. Snubbing is required less or not at all for reduced recovery characteristics.
Features
Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs
Short Circuit Rated UltraFast: Optimized for high operating frequencies ?5.0 kHz, and Short Circuit Rated to 10?s @125°C? VGE=15V
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
Industry standard TO-247AC package
Lead-Free
Applications
Power Management
Sensing & Instrumentation
Consumer Electronics
Alternative Energy
Maintenance & Repair
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
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In-stock SKU
15,000+
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