INFINEON IRG4P254SPBF
Manufacturer No:
IRG4P254SPBF
Manufacturer:
INFINEON
Package:
TO-247-3
Description:
Quantity:
In Stock :9373
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Expected Shipping：Mon, Jun 15 - Tue, Jun 16, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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IRG4P254SPBF Information
INFINEON IRG4P254SPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRG4P254SPBF.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Number of Pins
- 3
- Supplier Device Package
- TO-247AC
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Bulk
- Published
- 2004
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Termination
- Through Hole
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Voltage - Rated DC
- 250V
- Max Power Dissipation
- 200W
- Current Rating
- 98A
- Element Configuration
- Single
- Power Dissipation
- 200W
- Input Type
- Standard
- Power - Max
- 200W
Download datasheets and manufacturer documentation for INFINEON IRG4P254SPBF.
Other Related Documents:
Datasheets:
ConflictMineralStatement:
IRG4P254SPBF Description
IRG4P254SPBF is an N-channel single IGBT transistor from the manufacturer Infineon Technologies with the breakdown voltage of 250V. The operating temperature of the IRG4P254SPBF is -55°C~150°C TJ and its maximum power dissipation is 200W. IRG4P254SPBF has 3 pins and it is available in Bulk packaging way. The Collector Emitter Voltage (VCEO) of IRG4P254SPBF is 1.5V.
IRG4P254SPBF Features
Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
Lead-Free
IRG4P254SPBF Applications
Generation 4 IGBTs offer highest efficiency available
IGBTs optimized for specified application conditions
High Power density
Lower conduction losses than similarly rated MOSFET
Lower Gate Charge than equivalent MOSFET
Simple Gate Drive characteristics compared to Thyristors
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