INFINEON IRFSL41N15D
Manufacturer No:
IRFSL41N15D
Manufacturer:
INFINEON
Package:
TO-262-3 Long Leads, I2Pak, TO-262AA
Description:
MOSFET (Metal Oxide) N-Channel Tube 45m ? @ 25A, 10V ±30V 2520pF @ 25V 110nC @ 10V 150V TO-262-3 Long Leads, I2Pak, TO-262AA
Quantity:
In Stock :4032
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Shipped from：HK Warehouse
Expected Shipping：Mon, Jun 15 - Tue, Jun 16, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRFSL41N15D Information
INFINEON IRFSL41N15D technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRFSL41N15D.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2003
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 3
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSIP-T3
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 3.1W Ta
- Operating Mode
- ENHANCEMENT MODE
Download datasheets and manufacturer documentation for INFINEON IRFSL41N15D.
Other Related Documents:
IRFSL41N15D Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 470 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2520pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 41A.Pulsed drain current is maximum rated peak drain current 164A.A normal operation of the DS requires keeping the breakdown voltage above 150V.This transistor requires a drain-source voltage (Vdss) of 150V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFSL41N15D Features
the avalanche energy rating (Eas) is 470 mJ
based on its rated peak drain current 164A.
a 150V drain to source voltage (Vdss)
IRFSL41N15D Applications
There are a lot of Infineon Technologies
IRFSL41N15D applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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12.28 M
Listed Part Number
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