INFINEON IRFS4410TRLPBF

Manufacturer No:

IRFS4410TRLPBF

Manufacturer:

INFINEON

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 10m ? @ 58A, 10V ±20V 5150pF @ 50V 180nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Quantity:

In Stock :5164

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

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Step4：Individual Package

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1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRFS4410TRLPBF Information

INFINEON IRFS4410TRLPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRFS4410TRLPBF.

Type
Parameter

Factory Lead Time
12 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~175°C TJ

Packaging
Tape & Reel (TR)

Series
HEXFET®

Published
2007

Type
Parameter

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

ECCN Code
EAR99

Resistance
10MOhm

Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier

Voltage - Rated DC
100V

Technology
MOSFET (Metal Oxide)

Terminal Form
GULL WING

Download datasheets and manufacturer documentation for INFINEON IRFS4410TRLPBF.

IRFS4410TRLPBF Overview

There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 220 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5150pF @ 50V.This device has a continuous drain current (ID) of [96A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.A device's drain current is its maximum continuous current, and this device's drain current is 75A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 55 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 24 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.Its overall power consumption can be reduced by using drive voltage (10V).

IRFS4410TRLPBF Features

the avalanche energy rating (Eas) is 220 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 55 ns
a threshold voltage of 4V