

INFINEON IRFS4310ZTRLPBF
Manufacturer No:
IRFS4310ZTRLPBF
Manufacturer:
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 6m ? @ 75A, 10V ±20V 6860pF @ 50V 170nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:


In Stock :4416
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Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRFS4310ZTRLPBF Information
INFINEON IRFS4310ZTRLPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRFS4310ZTRLPBF.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- HEXFET®
- Published
- 2004
- Type
- Parameter
- JESD-609 Code
- e3
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
Download datasheets and manufacturer documentation for INFINEON IRFS4310ZTRLPBF.
Other Related Documents:
PCN Design/Specification:
PCN Packaging:
ConflictMineralStatement:
The IRFS4310ZTRLPBF is a HEXFET? Power MOSFET. The HEXFET? is a voltage-controlled power MOSFET device, which is fundamentally different. To create a flow of current in the drain, a voltage must be provided between the gate and source terminals. A layer of silicon dioxide serves as an electrical barrier between the gate and the source.
IRFS4310ZTRLPBF Features
? Ruggedness of the Gate, Avalanche, and Dynamic dV/dt
? Avalanche SOA and fully characterized capacitance
? Enhanced dV/dt and dI/dt capability of body diodes
? Lead-Free
? Very low RDS(ON) at 4.5Vgs
? Optimized for logic level drive
? Superior R*Q at 4.5Vgs
IRFS4310ZTRLPBF Applications
? Synchronous Rectification with High Efficiency in SMPS
? Power Supply Uninterruptible
? Power Switching at High Speed
? Circuits with hard switches and high frequencies
? DC motor drive
IRFS4310ZTRLPBF Relevant information
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