INFINEON IRFS41N15DTRLP

Manufacturer No:

IRFS41N15DTRLP

Manufacturer:

INFINEON

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 45m ? @ 25A, 10V ±30V 2520pF @ 25V 110nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Quantity:

In Stock :6580

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Expected Shipping：Mon, May 11 - Tue, May 12, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IRFS41N15DTRLP Information

INFINEON IRFS41N15DTRLP technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRFS41N15DTRLP.

Type
Parameter

Factory Lead Time
14 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~175°C TJ

Packaging
Tape & Reel (TR)

Series
HEXFET®

Published
2006

Type
Parameter

JESD-609 Code
e3

Part Status
Not For New Designs

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

Termination
SMD/SMT

ECCN Code
EAR99

Resistance
45MOhm

Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature
AVALANCHE RATED

Voltage - Rated DC
150V

Download datasheets and manufacturer documentation for INFINEON IRFS41N15DTRLP.

IRFS41N15DTRLP Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 470 mJ.A device's maximal input capacitance is 2520pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 41A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 150V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 25 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 164A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 16 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 5.5V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).

IRFS41N15DTRLP Features

the avalanche energy rating (Eas) is 470 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 164A.
a threshold voltage of 5.5V