VISHAY IRFRC20PBF
Manufacturer No:
IRFRC20PBF
Manufacturer:
VISHAY
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tube 4.4Ohm @ 1.2A, 10V ±20V 350pF @ 25V 18nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :5439
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Shipped from：HK Warehouse
Expected Shipping：Fri, Jun 5 - Sat, Jun 6, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRFRC20PBF Information
VISHAY IRFRC20PBF technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRFRC20PBF.
- Type
- Parameter
- Factory Lead Time
- 8 Weeks
- Contact Plating
- Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins
- 3
- Supplier Device Package
- D-Pak
- Weight
- 1.437803g
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Type
- Parameter
- Published
- 1997
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Resistance
- 4.4Ohm
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Technology
- MOSFET (Metal Oxide)
- Number of Elements
- 1
- Number of Channels
- 1
- Power Dissipation-Max
- 2.5W Ta 42W Tc
Download datasheets and manufacturer documentation for VISHAY IRFRC20PBF.
Datasheets:
RohsStatement:
IRFRC20PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 350pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [30 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 4.4Ohm.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFRC20PBF Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 4.4Ohm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
IRFRC20PBF Applications
There are a lot of Vishay Siliconix
IRFRC20PBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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