INFINEON IRFR9N20DPBF

Manufacturer No:

IRFR9N20DPBF

Manufacturer:

INFINEON

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) N-Channel Tube 380m ? @ 5.6A, 10V ±30V 560pF @ 25V 27nC @ 10V 200V TO-252-3, DPak (2 Leads + Tab), SC-63

Quantity:

In Stock :5849

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Shipped from：HK Warehouse

Expected Shipping：Tue, May 19 - Wed, May 20, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRFR9N20DPBF Information

INFINEON IRFR9N20DPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRFR9N20DPBF.

Type
Parameter

Factory Lead Time
14 Weeks

Mounting Type
Surface Mount

Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

Surface Mount
YES

Transistor Element Material
SILICON

Operating Temperature
-55°C~175°C TJ

Packaging
Tube

Series
HEXFET®

Published
2000

JESD-609 Code
e3

Type
Parameter

Part Status
Discontinued

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

ECCN Code
EAR99

Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
260

Download datasheets and manufacturer documentation for INFINEON IRFR9N20DPBF.

IRFR9N20DPBF Overview

In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 100 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 560pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 9.4A.Pulsed drain current is maximum rated peak drain current 38A.A normal operation of the DS requires keeping the breakdown voltage above 200V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).