INFINEON IRFR5505TRL

Manufacturer No:

IRFR5505TRL

Manufacturer:

INFINEON

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 110m ? @ 9.6A, 10V ±20V 650pF @ 25V 32nC @ 10V 55V TO-252-3, DPak (2 Leads + Tab), SC-63

Quantity:

In Stock :7686

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Expected Shipping：Sat, May 23 - Sun, May 24, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRFR5505TRL Information

INFINEON IRFR5505TRL technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRFR5505TRL.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

Surface Mount
YES

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Series
HEXFET®

Published
1997

JESD-609 Code
e3

Part Status
Obsolete

Type
Parameter

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

ECCN Code
EAR99

Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Subcategory
Other Transistors

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
260

Download datasheets and manufacturer documentation for INFINEON IRFR5505TRL.

Datasheets:

infineontechnologies-irfr5505-datasheets-0591.pdf

IRFR5505TRL Overview

This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 150 mJ.The maximum input capacitance of this device is 650pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 18A.There is no pulsed drain current maximum for this device based on its rated peak drain current 64A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 55V.The drain-to-source voltage (Vdss) of this transistor needs to be at 55V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.