INFINEON IRFR5505GTRPBF

Manufacturer No:

IRFR5505GTRPBF

Manufacturer:

INFINEON

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 110mOhm @ 9.6A, 10V ±20V 650pF @ 25V 32nC @ 10V 55V TO-252-3, DPak (2 Leads + Tab), SC-63

Quantity:

In Stock :4236

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Shipped from：HK Warehouse

Expected Shipping：Sat, May 23 - Sun, May 24, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRFR5505GTRPBF Information

INFINEON IRFR5505GTRPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRFR5505GTRPBF.

Type
Parameter

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins
3

Supplier Device Package
D-Pak

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Series
HEXFET®

Published
2004

Part Status
Obsolete

Type
Parameter

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Resistance
110MOhm

Max Operating Temperature
150°C

Min Operating Temperature
-55°C

Technology
MOSFET (Metal Oxide)

Number of Elements
1

Power Dissipation-Max
57W Tc

Element Configuration
Single

Power Dissipation
57W

Turn On Delay Time
12 ns

Download datasheets and manufacturer documentation for INFINEON IRFR5505GTRPBF.

Datasheets:

infineon-irfr5505gtrpbf-datasheets-3289.pdf

infineon-irfr5505gtrpbf-datasheets-3290.pdf

ConflictMineralStatement:

infineon-b43821a4225m000-conflictmineralstatement-7662.pdf

IRFR5505GTRPBF Overview

CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 650pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -55V.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 110mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 12 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 55V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFR5505GTRPBF Features

a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of -55V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 110mOhm
a 55V drain to source voltage (Vdss)