VISHAY IRFR420TRRPBF

Manufacturer No:

IRFR420TRRPBF

Manufacturer:

VISHAY

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3 ? @ 1.4A, 10V ±20V 360pF @ 25V 19nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63

Quantity:

In Stock :9293

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Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRFR420TRRPBF Information

VISHAY IRFR420TRRPBF technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRFR420TRRPBF.

Type
Parameter

Factory Lead Time
14 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins
3

Weight
1.437803g

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Published
2016

Type
Parameter

JESD-609 Code
e3

Pbfree Code
yes

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

Terminal Finish
Matte Tin (Sn)

Additional Feature
AVALANCHE RATED

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Terminal Form
GULL WING

Download datasheets and manufacturer documentation for VISHAY IRFR420TRRPBF.

Datasheets:

vishaysiliconix-irfr420pbf-datasheets-7930.pdf

RohsStatement:

vishaydale-imc0402rk47nj-rohsstatement-4552.pdf

IRFR420TRRPBF Overview

In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 400 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 360pF @ 25V.This device conducts a continuous drain current (ID) of 2.4A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 33 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 8A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 500V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFR420TRRPBF Features

the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 2.4A
the turn-off delay time is 33 ns
based on its rated peak drain current 8A.
a 500V drain to source voltage (Vdss)