VISHAY IRFR320PBF
Manufacturer No:
IRFR320PBF
Manufacturer:
Package:
ROHS COMPLIANT, DPAK-3
Description:
Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3
Quantity:
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IRFR320PBF Information
VISHAY IRFR320PBF technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRFR320PBF.
- Type
- Parameter
- Pbfree Code
- Yes
- RoHS Status
- RoHS Compliant
- Part Life Cycle Code
- Transferred
- Ihs Manufacturer
- VISHAY SILICONIX
- Part Package Code
- TO-252
- Package Description
- ROHS COMPLIANT, DPAK-3
- Pin Count
- 3
- Reach Compliance Code
- compliant
- ECCN Code
- EAR99
- Samacsys Manufacturer
- Vishay
- Type
- Parameter
- Additional Feature
- AVALANCHE RATED
- Avalanche Energy Rating (Eas)
- 160 mJ
- Case Connection
- DRAIN
- Configuration
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min
- 400 V
- Drain Current-Max (ID)
- 3.1 A
- Drain-source On Resistance-Max
- 1.8 Ω
- FET Technology
- METAL-OXIDE SEMICONDUCTOR
- JEDEC-95 Code
- TO-252
- JESD-30 Code
- R-PSSO-G2
Download datasheets and manufacturer documentation for VISHAY IRFR320PBF.
Datasheets:
RohsStatement:
IRFR320PBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 350pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 3.1A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 400V, and this device has a drainage-to-source breakdown voltage of 400VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 30 ns.This device has a drain-to-source resistance of 1.8Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.For this transistor to work, a voltage 400V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFR320PBF Features
a continuous drain current (ID) of 3.1A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 1.8Ohm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)
IRFR320PBF Applications
There are a lot of Vishay Siliconix
IRFR320PBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
IRFR320PBF Relevant information
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