

INFINEON IRFR12N25D
Manufacturer No:
IRFR12N25D
Manufacturer:
INFINEON
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tube 260m ? @ 8.4A, 10V ±30V 810pF @ 25V 35nC @ 10V 250V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:


In Stock :1346
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IRFR12N25D Information
INFINEON IRFR12N25D technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRFR12N25D.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2001
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Type
- Parameter
- Power Dissipation-Max
- 144W Tc
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 260m ? @ 8.4A, 10V
- Vgs(th) (Max) @ Id
- 5V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 810pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 14A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 35nC @ 10V
- Drain to Source Voltage (Vdss)
- 250V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Vgs (Max)
- ±30V
Download datasheets and manufacturer documentation for INFINEON IRFR12N25D.
Other Related Documents:
IRFR12N25D Description
IRFR12N25D is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 250V. The operating temperature of the IRFR12N25D is -55°C~175°C TJ and its maximum power dissipation is 144W Tc. IRFR12N25D has 3 pins and it is available in Tube packaging way.
IRFR12N25D Features
Low Gate-to-Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
IRFR12N25D Applications
High frequency DC-DC converters
IRFR12N25D Relevant information
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