INFINEON IRFR120ZTRLPBF
INFINEON IRFR120ZTRLPBF

INFINEON IRFR120ZTRLPBF

Manufacturer No:

IRFR120ZTRLPBF

Manufacturer:

INFINEON

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 190mOhm @ 5.2A, 10V ±20V 310pF @ 25V 10nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63

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Expected Shipping:Thu, May 7 - Fri, May 8, 2026
Date Code:Within 2 Years

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Step1:Prepare product

Step1:Prepare product

Step2:Desiccant Protection

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step3:Vacuum Packaging

Step4:Individual Package

Step4:Individual Package

Step5:Anti-collision Filling

Step5:Anti-collision Filling

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Step6:Packaging Box

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1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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IRFR120ZTRLPBF Information

INFINEON IRFR120ZTRLPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRFR120ZTRLPBF.

  • Type
  • Parameter
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • Number of Pins
  • 3
  • Supplier Device Package
  • D-Pak
  • Operating Temperature
  • -55°C~175°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Series
  • HEXFET®
  • Published
  • 2010
  • Part Status
  • Obsolete
  • Type
  • Parameter
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Max Operating Temperature
  • 175°C
  • Min Operating Temperature
  • -55°C
  • Technology
  • MOSFET (Metal Oxide)
  • Number of Elements
  • 1
  • Power Dissipation-Max
  • 35W Tc
  • Power Dissipation
  • 35W
  • Turn On Delay Time
  • 8.3 ns
  • FET Type
  • N-Channel
  • Rds On (Max) @ Id, Vgs
  • 190mOhm @ 5.2A, 10V

IRFR120ZTRLPBF Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 310pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 8.7A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 27 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 190mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8.3 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.

IRFR120ZTRLPBF Features


a continuous drain current (ID) of 8.7A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 27 ns
single MOSFETs transistor is 190mOhm
a 100V drain to source voltage (Vdss)


IRFR120ZTRLPBF Applications


There are a lot of Infineon Technologies
IRFR120ZTRLPBF applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification