ONSEMI IRFR120ATM

Manufacturer No:

IRFR120ATM

Manufacturer:

ONSEMI

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 200m ? @ 4.2A, 10V 480pF @ 25V 22nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

Quantity:

In Stock :3036

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRFR120ATM Information

ONSEMI IRFR120ATM technical specifications, attributes, parameters and parts with similar specifications to ONSEMI IRFR120ATM.

Type
Parameter

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins
3

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Published
1997

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Technology
MOSFET (Metal Oxide)

Type
Parameter

Number of Elements
1

Power Dissipation-Max
2.5W Ta 32W Tc

Element Configuration
Single

Power Dissipation
32W

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
200m ? @ 4.2A, 10V

Vgs(th) (Max) @ Id
4V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
480pF @ 25V

Current - Continuous Drain (Id) @ 25°C
8.4A Tc

Gate Charge (Qg) (Max) @ Vgs
22nC @ 10V

Download datasheets and manufacturer documentation for ONSEMI IRFR120ATM.

Datasheets:

onsemiconductor-irfr120atm-datasheets-3537.pdf

onsemiconductor-irfr120atm-datasheets-1838.pdf

ReachStatement:

onsemiconductor-6svp22m-reachstatement-6839.pdf

IRFR120ATM Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 480pF @ 25V.This device conducts a continuous drain current (ID) of 8.4A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 36 ns occurs as the input capacitance charges before drain current conduction commences.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFR120ATM Features

a continuous drain current (ID) of 8.4A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 36 ns
a threshold voltage of 4V