ONSEMI IRFR120_R4941

Manufacturer No:

IRFR120_R4941

Manufacturer:

ONSEMI

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) N-Channel Tube 270mOhm @ 5.9A, 10V ±20V 350pF @ 25V 15nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63

Quantity:

In Stock :2663

Looking for price or availability? Send us an RFQ and our sales team will respond quickly.

Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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All components supplied by Aichiplink are sourced from trusted global suppliers and verified through strict in-house inspection and quality control procedures.

Quality Assurance

Certified in-house inspection and testing facilities ensure all components meet internationally recognized quality standards.

User Guide

Aichiplink operates certified in-house inspection and testing facilities to ensure all electronic components meet internationally recognized quality and compliance standards. Our quality management system is verified through ISO 9001 certification and industry-standard inspection procedures.

PURCHASE

Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.

MEANS OF PAYMENT

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RFQ (REQUEST FOR QUOTATIONS)

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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRFR120_R4941 Information

ONSEMI IRFR120_R4941 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI IRFR120_R4941.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package
TO-252AA

Operating Temperature
-55°C~175°C TJ

Packaging
Tube

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Technology
MOSFET (Metal Oxide)

Power Dissipation-Max
50W Tc

FET Type
N-Channel

Type
Parameter

Rds On (Max) @ Id, Vgs
270mOhm @ 5.9A, 10V

Vgs(th) (Max) @ Id
4V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
350pF @ 25V

Current - Continuous Drain (Id) @ 25°C
8.4A Tc

Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V

Drain to Source Voltage (Vdss)
100V

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±20V

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for ONSEMI IRFR120_R4941.

Datasheets:

onsemiconductor-irfu120r4941-datasheets-4903.pdf

IRFR120_R4941 Overview

The maximum input capacitance of this device is 350pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.