VISHAY IRFR110TRPBF

Manufacturer No:

IRFR110TRPBF

Manufacturer:

VISHAY

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 540mOhm @ 2.6A, 10V ±20V 180pF @ 25V 8.3nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63

Quantity:

In Stock :9835

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRFR110TRPBF Information

VISHAY IRFR110TRPBF technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRFR110TRPBF.

Type
Parameter

Factory Lead Time
8 Weeks

Contact Plating
Tin

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins
3

Supplier Device Package
D-Pak

Weight
1.437803g

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Type
Parameter

Published
2010

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Resistance
540mOhm

Max Operating Temperature
150°C

Min Operating Temperature
-55°C

Technology
MOSFET (Metal Oxide)

Number of Elements
1

Number of Channels
1

Power Dissipation-Max
2.5W Ta 25W Tc

Download datasheets and manufacturer documentation for VISHAY IRFR110TRPBF.

Datasheets:

vishaysiliconix-irfr110trpbf-datasheets-0113.pdf

vishay-irfr110trpbf-datasheets-3680.pdf

RohsStatement:

vishaydale-imc0402rk47nj-rohsstatement-4552.pdf

IRFR110TRPBF Overview

CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 180pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 15 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 540mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 6.9 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2V.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFR110TRPBF Features

a continuous drain current (ID) of 4.3A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 540mOhm
a threshold voltage of 2V
a 100V drain to source voltage (Vdss)