VISHAY IRFR110TRLPBF

Manufacturer No:

IRFR110TRLPBF

Manufacturer:

VISHAY

Package:

SMALL OUTLINE, R-PSSO-G2

Description:

Description: Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3

Quantity:

In Stock :9936

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step2：Desiccant Protection

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Step4：Individual Package

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SHIPPING COST

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRFR110TRLPBF Information

VISHAY IRFR110TRLPBF technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRFR110TRLPBF.

Type
Parameter

Pbfree Code
Yes

RoHS Status
RoHS Compliant

Part Life Cycle Code
Transferred

Ihs Manufacturer
VISHAY SILICONIX

Part Package Code
TO-252AA

Package Description
SMALL OUTLINE, R-PSSO-G2

Pin Count
3

Reach Compliance Code
compliant

ECCN Code
EAR99

Samacsys Manufacturer
Vishay

Type
Parameter

Additional Feature
AVALANCHE RATED

Avalanche Energy Rating (Eas)
75 mJ

Case Connection
DRAIN

Configuration
SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min
100 V

Drain Current-Max (ID)
4.3 A

Drain-source On Resistance-Max
0.54 Ω

FET Technology
METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code
TO-252AA

JESD-30 Code
R-PSSO-G2

Download datasheets and manufacturer documentation for VISHAY IRFR110TRLPBF.

Datasheets:

SILXS25509-1.pdf

IRFR110TRLPBF Overview

A device's maximum input capacitance is 180pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 4.3A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 15 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 540mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.