VISHAY IRFR110TRL
Manufacturer No:
IRFR110TRL
Manufacturer:
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 540mOhm @ 2.6A, 10V ±20V 180pF @ 25V 8.3nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:


In Stock :1103
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IRFR110TRL Information
VISHAY IRFR110TRL technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRFR110TRL.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins
- 3
- Supplier Device Package
- D-Pak
- Weight
- 1.437803g
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2016
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Voltage - Rated DC
- 100V
- Technology
- MOSFET (Metal Oxide)
- Current Rating
- 4.7A
- Number of Channels
- 1
- Power Dissipation-Max
- 2.5W Ta 25W Tc
- Element Configuration
- Single
- Turn On Delay Time
- 6.9 ns
Download datasheets and manufacturer documentation for VISHAY IRFR110TRL.
Datasheets:
RohsStatement:
IRFR110TRL Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 180pF @ 25V.This device conducts a continuous drain current (ID) of 4.3A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 540mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 6.9 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFR110TRL Features
a continuous drain current (ID) of 4.3A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 540mOhm
a 100V drain to source voltage (Vdss)
IRFR110TRL Applications
There are a lot of Vishay Siliconix
IRFR110TRL applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
IRFR110TRL Relevant information
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