

INFINEON IRFR1010Z
Manufacturer No:
IRFR1010Z
Manufacturer:
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tube 7.5m ? @ 42A, 10V ±20V 2840pF @ 25V 95nC @ 10V 55V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:


In Stock :6690
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRFR1010Z Information
INFINEON IRFR1010Z technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRFR1010Z.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2004
- JESD-609 Code
- e0
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- TIN LEAD
- Additional Feature
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 245
- Time@Peak Reflow Temperature-Max (s)
- 30
Download datasheets and manufacturer documentation for INFINEON IRFR1010Z.
Other Related Documents:
IRFR1010Z Description
This IRFR1010Z HEXFET? Power MOSFET employs cutting-edge processing techniques to deliver ultra-low on-resistance per silicon area. A 175°C junction working temperature, quick switching speed, and increased repeating avalanche rating are all included in this design. These characteristics combine to make this design a highly efficient and dependable device for a wide range of applications.
IRFR1010Z Features
Technology for Advanced Processes
On-Resistance is really low.
Operating Temperature: 175°C
Quick Switching
Avalanche Repetitive Tjmax is allowed.
IRFR1010Z Applications
IRFR1010Z is intended for general use and can be used in a variety of situations.
IRFR1010Z Relevant information
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