ONSEMI IRFP450B

Manufacturer No:

IRFP450B

Manufacturer:

ONSEMI

Package:

TO-3P-3, SC-65-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 390mOhm @ 7A, 10V ±30V 3800pF @ 25V 113nC @ 10V 500V TO-3P-3, SC-65-3

Quantity:

In Stock :9426

Looking for price or availability? Send us an RFQ and our sales team will respond quickly.

Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Thu, May 21 - Fri, May 22, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

Payment

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All components supplied by Aichiplink are sourced from trusted global suppliers and verified through strict in-house inspection and quality control procedures.

Quality Assurance

Certified in-house inspection and testing facilities ensure all components meet internationally recognized quality standards.

User Guide

Aichiplink operates certified in-house inspection and testing facilities to ensure all electronic components meet internationally recognized quality and compliance standards. Our quality management system is verified through ISO 9001 certification and industry-standard inspection procedures.

PURCHASE

Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.

MEANS OF PAYMENT

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and Wire Transfer. Net terms may be available for qualified customers upon approval.

RFQ (REQUEST FOR QUOTATIONS)

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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRFP450B Information

ONSEMI IRFP450B technical specifications, attributes, parameters and parts with similar specifications to ONSEMI IRFP450B.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-3P-3, SC-65-3

Supplier Device Package
TO-3P

Operating Temperature
-55°C~150°C TJ

Packaging
Tube

Published
2001

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Technology
MOSFET (Metal Oxide)

Power Dissipation-Max
205W Tc

Type
Parameter

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
390mOhm @ 7A, 10V

Vgs(th) (Max) @ Id
4V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
3800pF @ 25V

Current - Continuous Drain (Id) @ 25°C
14A Tc

Gate Charge (Qg) (Max) @ Vgs
113nC @ 10V

Drain to Source Voltage (Vdss)
500V

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±30V

Download datasheets and manufacturer documentation for ONSEMI IRFP450B.

Datasheets:

onsemiconductor-irfp450b-datasheets-3549.pdf

IRFP450B Description

These N-channel enhanced mode power field effect transistors IRFP450B are produced using Fairchild's proprietary planar DMOS technology.

This advanced technology is tailor-made to minimize on-resistance, provides superior switching performance, and withstands high-energy pulses in avalanche and rectifier modes. These devices are very suitable for high frequency switching power supplies, power factor correction and half-bridge-based electronic lamp ballasts.